PaperRecombination radiation in gaas by optical and electrical injectionMarshall I. Nathan, Gerald BurnsApplied Physics Letters
PaperTime dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealingMarshall I. Nathan, R.T. Hodgson, et al.Applied Physics Letters
PaperAn improved AuGe ohmic contact to n-GaAsMarshall I. Nathan, Mordehai HeiblumSolid-State Electronics