M. Eizenberg, Armin Segmüller, et al.
Journal of Applied Physics
We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.
M. Eizenberg, Armin Segmüller, et al.
Journal of Applied Physics
H. Föll, C.B. Carter
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
K.N. Tu, N.C. Yeh, et al.
Physical Review B
W.K. Chu, H. Kraütle, et al.
Applied Physics Letters