K.N. Tu
Scripta Metallurgica
We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.
K.N. Tu
Scripta Metallurgica
M. Wittmer, C.-Y. Ting, et al.
Journal of Applied Physics
P.E. Schmid, P.S. Ho, et al.
Physical Review B
J.M. Poate, W.L. Brown, et al.
Nuclear Instruments and Methods