A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Phase shifters are key components in phased array systems. A low loss and low loss variations SiGe differential phase shifter for the Ka-band is described. This bidirectional differential reflection type phase shifter (RTPS) design employs a novel diagonal configuration for the coupler and it is controlled by a single voltage node. The measured results show state of the art insertion loss of 5±1 dB, phase tuning range larger than 180 degrees, for a frequency range of 26.5 GHz to 32.8 GHz (21%). At 30 GHz, the phase shifter exhibits insertion loss of 4.8 dB, loss variation of ±0.4 dB, and more than 206 degrees of phase shift range. The RTPS was fabricated in a standard BiCMOS SiGe process and occupies 0.64 mm2 die area.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL
Sergi Abadal, Benny Sheinman, et al.
IEEE Micro