G.V. Treyz, Jean-Marc Halbout, et al.
IEEE Electron Device Letters
Paper
Silicon mach-zehnder waveguide interferometers operating at 1·3 μm
Abstract
Mach-Zehnder waveguide interferometers have been fabricated in silicon and operation has been demonstrated at ? = 1–3/mi. The switching mechanism is based on the thermally induced variation of the refractive index of crystalline silicon. Modulation depths of 40% were obtained for switching powers of 30 mW and switching times of 50′s. © 1991, The Institution of Electrical Engineers. All rights reserved.
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