Nicolas Boyer, Alexander Janta-Polczynski, et al.
ECTC 2017
We investigate piezoresistance in lithographically defined silicon nanowires of various cross-sectional aspect ratios. Both 〈 110 〉 - and 〈 100 〉 -oriented nanowires are investigated under 〈 110 〉 -oriented strain. The nanowire thickness is varied from 23 to 45 nm and the nanowire width is varied from 5 to 113 nm. Our data shows piezoresistance in silicon nanowires being a surface induced effect with {110} surfaces inducing a much larger piezoresistance than {100} surfaces. This is consistent with a higher density of surface states on {110} surfaces than on {100} surfaces. Our experimental findings support recent computational work pointing toward surface states being the source of giant piezoresistance in silicon nanowires. © 2010 American Institute of Physics.
Nicolas Boyer, Alexander Janta-Polczynski, et al.
ECTC 2017
Bo Peng, Chi Xiong, et al.
OFC 2017
Won Suk Lee, Sujith Chandran, et al.
CLEO 2024
Yoonmyung Lee, Daeyeon Kim, et al.
IEEE Transactions on VLSI Systems