Folkert Horst, William M.J. Green, et al.
Photonics North 2009
We report on a Si3N4-based surface-passivation technique for increasing free-carrier lifetimes in submicrometer silicon-on-insulator waveguides by up to 2 orders of magnitude. The carrier lifetime was measured by injecting free carriers into a critically coupled ring resonator through photoexcitation by short pump pulses and subsequently tracking the spectral detuning of the resonator during the carrier-recombination phase. Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si3N4coating. Such surface passivation is essential for low-power operation of optical switches based on carrier injection. © 2009 Optical Society of America.
Folkert Horst, William M.J. Green, et al.
Photonics North 2009
Xiaoping Liu, William M. J. Green, et al.
Optics Letters
Joris Van Campenhout, Liu Liu, et al.
IEEE Photonics Technology Letters
Liu, Joris Van Campenhout, et al.
AOE 2008