Simulation of phonon-induced mobility under arbitrary stress, wafer and channel orientations and its application to FinFET technology

By applying appropriate tensor transformations for the subband solutions of electron and hole and their transport properties, we demonstrated the capability of determining the phonon induced mobility for planar and FinFET MOSFET devices under arbitrary stress, wafer and channel orientations. The electron and hole mobilities for such devices are numerically solved and their angular dependences on wafer are shown. We further investigated the mobility trend under some high index gate orientation conditions that are of interest to current 14 nm FinFET technology.