D.J. DiMaria, M.V. Fischetti
Applied Surface Science
The mobility of holes in Si inversion layers for different crystal orientation was studied using a six-band k·p model. Compressive or tensile strain applied to the channel, varying thickness of the silicon layer were also investigated. It was found that compressive and tensile strain enhance the mobility.
D.J. DiMaria, M.V. Fischetti
Applied Surface Science
B. Yang, R. Takalkar, et al.
IEDM 2008
P. Solomon, D.J. Frank
LPE 1995
P. Solomon
Surface Science