M.V. Fischetti
IWCE 1998
The mobility of holes in Si inversion layers for different crystal orientation was studied using a six-band k·p model. Compressive or tensile strain applied to the channel, varying thickness of the silicon layer were also investigated. It was found that compressive and tensile strain enhance the mobility.
M.V. Fischetti
IWCE 1998
M.V. Fischetti, S.E. Laux, et al.
SISPAD 2005
M.V. Fischetti, S.E. Laux, et al.
Journal of Computational Electronics
C. Sheraw, M. Yang, et al.
VLSI Technology 2005