A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
The effect of growth conditions on interfacial roughness in InAs/GaAs hetcrostructures prepared by molecular beam epitaxy has been investigated using synchrotron radiation. Measurement of grazing incidence X-ray reflectivity (GIXR) and total electron yield (TEY) in the soft X-ray wavelengths are used for nondestructive characterization of interfacial roughness in these semiconductor heterojunctions. Our results indicate that a smoothing process takes place during epitaxial growth, and that the measured interfacial roughness is lowest for In-stabilized deposition on a GaAs substrate at 2° off (100), and highest with As-stabilized overgrowth on GaAs(100). The surface and interfacial roughness are practically independent of the layer thickness in the range investigated (70-600 Å). © 1990.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
J.C. Marinace
JES
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry