Mark W. Dowley
Solid State Communications
We have developed a theoretical formalism to determine concentrations of native defects and impurities in semiconductors, and applied it to the problem of p-type doping in ZnSe. Limitations in the achievable hole concentrations are not due to native defect compensation. Two mechanisms are responsible: one is the competition between various substitutional and interstitial configurations, the other is the solubility limit imposed by formation of other phases. A comprehensive examination of Li, Na and N acceptors in ZnSe is presented. © 1992.
Mark W. Dowley
Solid State Communications
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering