M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
P.C. Pattnaik, D.M. Newns
Physical Review B