Some electrical properties of the semiconductor βGa2O3

M.R. Lorenz; J.F. Woods; R.J. Gambino

doi:10.1016/0022-3697(67)90305-8

Journal of Physics and Chemistry of Solids

Paper

01 Jan 1967

Some electrical properties of the semiconductor βGa₂O₃

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Abstract

The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.

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Abstract

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NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.

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