Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Paper
Some electrical properties of the semiconductor βGa2O3
Abstract
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
Related
K.A. Chao
Physical Review B
Peter J. Price
Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B