M.A. Tischler, B.D. Parker, et al.
Journal of Electronic Materials
The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As-prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as-prepared samples. Photoluminescence measurements from as-prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.
M.A. Tischler, B.D. Parker, et al.
Journal of Electronic Materials
J.L. Batstone
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
T.F. Kuech, M.A. Tischler, et al.
Journal of Crystal Growth
Z. Schlesinger, R.T. Collins, et al.
Physical Review B