Conference paper
Within-chip variability analysis
S. Nassif
IEDM 1998
The straddle-gate transistor is developed, a pentode-like structure that incorporates the ideas with that of a back-plane structure to achieve an approximately 10 nm length scale, where field-effect still dominates, and where the fundamental constraint of source-to-drain tunneling through silicon is restrained by modulating the effective channel length of the device between the on-state and the off-state. Theoretically, it achieves this length scale within the constraints of power and density, but at the expense of smaller speed improvements.
S. Nassif
IEDM 1998
A. Deutsch, H. Harrer, et al.
IEDM 1998
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics