Physical Review Letters

Review

24 Aug 1987

Strain and the interpretation of band-lineup measurements

View publication

Abstract

A Comment on the Letter by T. M. Duc, C. Hsu, and J. P. Faurie, Phys. Rev. Lett. 58, 1127 (1987). © 1987 The American Physical Society.

Related

Paper

Shape transition in growth of strained islands: Spontaneous formation of quantum wires

J. Tersoff, R.M. Tromp

Physical Review Letters

Conference paper

Semiconductor surface characterization with scanning tunneling microscopy

J. Tersoff

ESSDERC Satellite Symposium 1989

Paper

Facet growth under stress: The limits of strained-layer stability

J. Tersoff

Physical Review Letters

Paper

Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires

S. Kodambaka, J. Tersoff, et al.

Physical Review Letters

View all publications