Michiel Sprik
Journal of Physics Condensed Matter
A recombination mechanism occurring in semiconductors containing extended defects is presented. The model is based on experimental data from hydrogen-plasma-treated silicon, containing extended defects like platelets. The broad photoluminescence bands from these samples are attributed to the heavily damaged regions surrounding the platelets, where electrons and holes can be localized in strain-induced potential wells. From a theoretical estimate it is shown that a moderate compressive strain field surrounding {111} and {100} platelets is sufficient to explain the experimental data. © 1990 The American Physical Society.
Michiel Sprik
Journal of Physics Condensed Matter
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
T. Schneider, E. Stoll
Physical Review B
Ming L. Yu
Physical Review B