R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Several experiments have found that Ge initially grows layer by layer on the Si(100)2×1 surface, up to a thickness of 3 atomic layers. Further growth occurs via islands. Here, model calculations show that layer-by-layer growth is stabilized for up to 3 layers because it reduces the strain energy associated with the surface dimerization. © 1991 The American Physical Society.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
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