G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
The relaxation of the outermost Ge layers of the H-terminated Ge(111) surface is determined via low-energy electron diffraction intensity analysis. A contraction of the first interlayer spacing d12 by 0.100.05 A and a possible expansion of the second interlayer spacing d23 by 0.050.05 A is found. The influence of the H on the intensity curves is calculated and found to be negligible. A comparison with first-principles calculations is made and a mechanism is discussed that may explain the relaxation. © 1987 The American Physical Society.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Frank Stem
C R C Critical Reviews in Solid State Sciences
J.H. Stathis, R. Bolam, et al.
INFOS 2005