Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
This work presents a detailed study of transport in field effect transistors using transferred graphene grown by chemical vapor deposition. For the first time, we observe a shift of Dirac point in graphene deviecs as a consequence of gate length scaling. This shift has been identified as one of the signatures of short channel effects in graphene. In addition, an electron-hole asymmetry observed in short channel devices suggests a strong impact from graphene/metal contacts. © 2010 IEEE.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Amal Kasry, George Tulevski, et al.
IVESC 2010
Veeraraghvan S. Basker, Theodorus E. Standaert, et al.
VLSI Technology 2010
Shu-Jen Han, Satoshi Oida, et al.
DRC 2013