G.S. Oehrlein
ECS Meeting 1983
The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O 2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.
G.S. Oehrlein
ECS Meeting 1983
T.O. Sedgwick, S. Cohen, et al.
VLSI Science and Technology 1983
G.S. Oehrlein
Journal of Applied Physics
A. Henry, O.O. Awadelkarim, et al.
Journal of Applied Physics