Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We report on the first dynamical studies with scanning tunneling microscopy (STM). Single excess oxygen atoms migrating on the oxygen-induced (2 × 1) and c(2 × 2) reconstructions on Ni(110) and Ni(100), respectively, are detected space and time resolved. In principle, for varying temperature, the data reveal the local diffusion coefficient, the activation energy and the density of adatoms on terraces and at steps. For the Ni(110) (2 × 1), even the adsorption sites are identified. © 1986.
T.N. Morgan
Semiconductor Science and Technology
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures