G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters
The surface morphology of silicon (100) wafers has been measured by scanning tunneling microscopy. Samples which were bombarded with low-energy argon ions are found to have an average root-mean-square roughness of 4.0 Å, and the surfaces are covered with characteristic 50-Å-diam hillocks. The roughness of nonbombarded (control) samples is observed to be 1.8 Å, and this roughness arises in part from disorder at the interface between a native oxide and the silicon substrate.
G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters
R.M. Feenstra, J.Y. Lee, et al.
Physical Review B - CMMP
A. Henry, O.O. Awadelkarim, et al.
Materials Science and Engineering B
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters