R. Ludeke, A.B. McLean, et al.
Physical Review B
Al surfaces grown epitaxially on GaAs(100) substrates exhibit a nearly atomically smooth surface morphology which permits the formation of various clean and impurity-induced surface reconstructions. The Al(100)-c(2×2) reconstruction can be ascribed to a two-dimensional Fermi-surface instability. Arguments are given that suggest a charge-density-wave mechanism. © 1981 The American Physical Society.
R. Ludeke, A.B. McLean, et al.
Physical Review B
R. Ludeke, H.J. Wen
Microelectronic Engineering
R. Ludeke, E. Cartier
Microelectronic Engineering
Chin-An Chang, M. Heiblum, et al.
Applied Physics Letters