L.L. Chang, N. Kawai, et al.
Applied Physics Letters
Al surfaces grown epitaxially on GaAs(100) substrates exhibit a nearly atomically smooth surface morphology which permits the formation of various clean and impurity-induced surface reconstructions. The Al(100)-c(2×2) reconstruction can be ascribed to a two-dimensional Fermi-surface instability. Arguments are given that suggest a charge-density-wave mechanism. © 1981 The American Physical Society.
L.L. Chang, N. Kawai, et al.
Applied Physics Letters
R. Ludeke, T.-C. Chiang, et al.
Physica B+C
J.F. Morar, F.R. McFeely, et al.
Applied Physics Letters
H.J. Wen, R. Ludeke
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films