T.S. Kuan, T.F. Kuech, et al.
Physical Review Letters
The mobility and carrier density of two-dimensional hole systems formed at the interface of GaAs-Ga1-xAlxAs heterojunctions have been measured in the temperature range 1.9-100 K. The mobility increased monotonically with decreasing temperature, and in one sample reached 2.35×105 cm2 V-1 s -1, the highest value reported for holes. Optical phonon scattering (for T>40 K) and acoustic phonon scattering (for 15 K≤T≤40 K) are the mechanisms limiting the mobility down to low temperature, where Coulomb scattering dominates (for T<15 K). An observed linear increase of the inverse mobility with temperature cannot be explained quantitatively with a theory that was able to account for a similar behavior found in two-dimensional electrons.
T.S. Kuan, T.F. Kuech, et al.
Physical Review Letters
L. Esaki, L.L. Chang, et al.
Japanese Journal of Applied Physics
E. Mendez
IEEE JQE
M. Tatham, R.A. Taylor, et al.
Solid State Electronics