L. Thomas, M. Hayashi, et al.
INTERMAG 2006
The spin polarization of electrons injected into GaAs from a CoFeMgO (100) tunnel spin injector is inferred from the circular polarization of light emitted from a GaAs-based quantum well (QW) detector. The circular polarization strongly depends on the spin and electron hole recombination lifetimes in the QW. Using time-resolved optical techniques, we show that these lifetimes are highly temperature dependent. A peak in the charge lifetime versus temperature is likely responsible for the previously observed dip in the electroluminescence polarization. Evidence for a temperature-independent spin injection efficiency of ∼70% from 10 K to room temperature is found. © 2005 American Institute of Physics.
L. Thomas, M. Hayashi, et al.
INTERMAG 2006
L. Meier, G. Salis, et al.
ICPS Physics of Semiconductors 2006
G. Salis, A. Fuhrer, et al.
Physical Review B - CMMP
W.H. Teh, U. Dürig, et al.
Applied Physics Letters