Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Aluminum-doped zinc oxide films (ZnO) were deposited on Si wafers and glass substrates by dc magnetron sputtering from a ZnO target mixed with 2 wt% Al 2O 3 for photovoltaic films. The effect of base pressure, additional oxygen, and substrate temperature were studied in detail. By dc magnetron sputtering at room temperature, the resistivity and the average transmittance in visible range was 2.3 × 10 -3 Ω cm and 77.3%, respectively. And these were improved up to 3.3 × 10 -4 Ω cm and 86% at the substrate temperature of 400°C by high deposition rate and low impurity ambient. The mobility and the carrier concentration were improved by the increased preferred orientation of (002) plane and grain size of film with increasing deposition temperature. This advanced AZO film with good resistivity and transmittance can be expected as the front TCO of thin film solar cells. © 2012 Elsevier Ltd. All rights reserved.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Imran Nasim, Melanie Weber
SCML 2024
J.C. Marinace
JES
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering