Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters