Conference paper
Oxide breakdown model and its impact on SRAM cell functionality
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
J.H. Stathis, S. Rigo, et al.
Solid State Communications
E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
P. Jamison, M. Copel, et al.
MRS Spring Meeting 2006