J.H. Stathis
IRPS 2001
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 μA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate-oxide breakdown.
J.H. Stathis
IRPS 2001
Bruce Doris, Y.-H. Kim, et al.
VLSI Technology 2005
F. Palumbo, S. Lombardo, et al.
IRPS 2004
R. Rodríguez, J.H. Stathis, et al.
INFOS 2003