The DX centre
T.N. Morgan
Semiconductor Science and Technology
A thin (∼ 0.1 μm) layer is formed initially during the so-called "transient" period preceding the establishment of the steady state diffusion boundary layer in the melt, when films are dipped in a horizontal plane while undergoing axial rotation. Further evidence is given for the existence of the transient as a separate and distinct growth mode as compared to steady state growth. The transient layer, which grows comparatively rapidly, nevertheless has properties virtually identical to those of the subsequently grown steady state layer, except for its higher Pb concentration. © 1975.
T.N. Morgan
Semiconductor Science and Technology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME