Conference paper
Low-current Spin Transfer Torque MRAM
Guohan Hu, J. J. Nowak, et al.
VLSI-DAT 2017
A single-domain model for spin-transfer torque switching of double magnetic tunnel junctions with perpendicularly magnetized layers is developed. An analytical formula is derived for the switching current threshold, Ic0. Surprisingly, the model predicts that the switching current can be reduced by a factor of 10 compared to single magnetic tunnel junctions, for sufficiently large spin-polarizations. This effect is explained in terms of the "enhanced antiparallel-to-parallel" spin torque, familiar from single magnetic tunnel junctions.
Guohan Hu, J. J. Nowak, et al.
VLSI-DAT 2017
Guohan Hu, D. Kim, et al.
IEDM 2019
Shinji Yuasa, Kazuhiro Hono, et al.
MRS Bulletin
Guohan Hu, M. G. Gottwald, et al.
IEDM 2017