Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The thermal behavior of visible AlGaInP-GaInP ridge laser diodes is investigated numerically and experimentally. It is shown that various parameters critically influence the thermal resistance R of such devices. R is inversely proportional to the thermal conductivity of the heatsink. A substantial improvement in R—quite larger than in the AlGaAs system—is achieved for junction-side-down mounting compared to junction-side-up. R depends strongly on the width w of the ridge and this effect is different for junction-side-up or down mounting. In the first case, R ~ log (w) and in the second, R ~ 1/w. The thickness of the soldering material is a sensitive parameter which may increase the value of R by up to 15 K/W. On the other hand, for junction-side-up mounted devices, the top metallization layer has a very favorable effect: a 1 pm thick gold layer reduces R by 30%. The dynamics of thermal phenomena is also studied. It is shown that when a laser is switched on the steady state is reached in the ms time range. Finally, our experimental results show a very good agreement with our numerical data. © 1992 IEEE
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.A. Barker, D. Henderson, et al.
Molecular Physics