Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
The thermal oxidation of NiSi, NiSi2 and CoSi2 layers on silicon substrates causes the formation of surface films of SiO2 while the silicide layers are preserved. This is shown to occur via a mechanism of silicide decomposition followed by metal diffusion and recombination. In the disilicides, a measurable fraction of the silicon atoms diffuse together with the metal atoms. The process responsible for the uphill diffusion of the silicon atoms is thought to be similar to oxidation-enhanced diffusion. © 1983.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R. Ghez, J.S. Lew
Journal of Crystal Growth
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting