A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We have annealed the oxygen-deficient ceramic oxide YBa2Cu3O7-δ, where δ=0.4, in ambient oxygen to obtain in-diffusion of oxygen. In situ resistivity measurements were used to monitor annealing at constant heating rates between room temperature and 570 °C. The resistivity curve showed a maximum and a minimum. The temperatures where the maximum and the minimum were observed change with heating rate. By measuring their dependence on heating rate, which was varied from 15 to 0.1 °C/min, we have determined the activation energy of oxygen diffusion in the oxide (δ=0) to be 1.35±0.10 eV. The in-diffusion is limited by a near-surface layer which requires the measured activation energy for oxygen to diffuse through it. © 1988 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.C. Marinace
JES
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992