Xuanyao Fong, Rangharajan Venkatesan, et al.
IEEE Transactions on VLSI Systems
In this paper, a new genre of spin-transfer torque (STT) MRAM is proposed, in which bidirectional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic tunnel junction (MTJ), which is adjacent to a nonmagnetic metallic and a ferrite film. This film stack is heated or cooled by a Peltier element, which creates a bidirectional magnonic pulse in the ferrite film. Conversion of magnons to spin current occurs at the ferrite-metal interface, and the resulting STT is used to achieve fast (∼nanosecond) precessional switching of the ferromagnetic free layer in the MTJ. Compared to the electric-current-driven STT-MRAM with perpendicular magnetic anisotropy (PMA), thermoelectric STT-MRAM reduces the overall magnetization switching energy by more than 40% for nanosecond switching, combined with a write error rate (WER) of less than 10-9 and a lifetime of ten years or higher. The combination of higher thermal activation energy, subnanosecond read/write speed, improved tunneling magnetoresistance (TMR), and tunnel barrier reliability make thermoelectric STT-MRAM a promising choice for future nonvolatile memory applications. © 1965-2012 IEEE.
Xuanyao Fong, Rangharajan Venkatesan, et al.
IEEE Transactions on VLSI Systems
Stefano Poletto, Jay M. Gambetta, et al.
Physical Review Letters
Zhancheng Yao, Martin Sandberg, et al.
MRS Fall Meeting 2024
Saibal Mukhopadhyay, Keunwoo Kim, et al.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems