Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Measurements of thermoelectric power versus temperature of (CH)x doped with various concentrations of AsF5 are reported. These reflect the semiconductor-metal transition at ∼ 1% doping. The "pristine" thermopower is consistent with the conductivity-derived activation energy of 0.35 eV, and a residual defect/impurity carrier concentration of 0.1%. An analysis of the conductivity based on these data indicates that, while the disorder is certainly important, it is not the cause of the transition. © 1980.