Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have measured the thermoelectric power of pure NbSe3 as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. We find that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities then the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage. © 1981.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
A. Reisman, M. Berkenblit, et al.
JES