Martin Reiser
IEEE Transactions on Communications
The threshold voltage of “normally off” Si-MESFET s for simple dc-coupled circuits is defined and computed with a two-dimensional device model, taking into account carrier velocity saturation and diffusion. The influence of the main parameters, gate length conducting-layer thickness, and doping is investigated outside, the range of Shockley's equations. A threshold voltage of a MESFED with a 1-μm gate length UT= 0.2 V ± 10 percent requires a conducting layer thickness tolerance d = 0.15 μm ± 3 percent. Copyright © 1972 by The Institute of Electrical and Electronics Engineers, Inc.
Martin Reiser
IEEE Transactions on Communications
Simon S. Lam, Martin Reiser
IEEE Transactions on Communications
Reinhard Simons, Wilhelm Jutzi, et al.
IEEE Transactions on Magnetics
Wilhelm Jutzi
IEEE Transactions on Magnetics