G. Tsutsui, Ruqiang Bao, et al.
IEDM 2016
Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi. © 2009 American Institute of Physics.
G. Tsutsui, Ruqiang Bao, et al.
IEDM 2016
Wanki Kim, Robert L. Bruce, et al.
VLSI Technology 2019
Christian Lavoie, Praneet Adusumilli, et al.
ECS Meeting 2017 - New Orleans
Praneet Adusumilli, Conal E. Murray, et al.
ECS Meeting 2009