PaperHot-Electron-Induced Instability in 0.5-μm p-Channel MOSFET’s Patterned Using Synchrotron X-ray LithographyC.C.-H. Hsu, L.K. Wang, et al.IEEE Electron Device Letters
PaperHistory and future perspective of the modern silicon bipolar transistorT.H. NingIEEE Transactions on Electron Devices
Conference paper0.25μm low power CMOS devices and circuits from 8 inch SOI materialsB. Chen, A.S. Yapsir, et al.ICSICT 1995