Ching-Cheng Shir, Ian L. Sanders, et al.
IEEE Transactions on Magnetics
New transfer switches for 4-um period ion-implanted contiguous-disk bubble devices are reported. Bubbles are translated through the major loop during WRITE-line transfer so that the data appear at the detector-after transfer from the storage loops-in the same order as they are written into the chip. Bias field margins of ~ 8 percent have been obtained at drive field frequencies in the range of 100-400 kHz, making the designs particularly suitable for high performance (that is, short access time, high data rate) applications. Long-term testing has shown that such components can be operated over many cycles with only a modest degradation in bias margin of 0.5 Oe per decade. © 1982 IEEE
Ching-Cheng Shir, Ian L. Sanders, et al.
IEEE Transactions on Magnetics
Ian L. Sanders, Mark H. Kryder
Journal of Applied Physics
Y.S. Lin, G.S. Almasi, et al.
IEEE Transactions on Magnetics
Ian L. Sanders, William J. Kabelac
IEEE Transactions on Magnetics