Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We report on transport and EPR studies of (TMTSF)2-PF6, both in its pristine form and when doped with the sulfur analog TMTTF. All samples undergo a single phase transition which can be seen in both the transport and magnetic data and which, in the undoped material, occurs at ∼11.5 K. The effects of a 3% dopant concentration are dramatic: a 40% rise in the transition temperature, a 130% rise in the room- temperature spin susceptibility and a 30% fall in the low-temperature g shift. Possible causes are discussed. © 1981.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
R.W. Gammon, E. Courtens, et al.
Physical Review B