R. Ghez, J.S. Lew
Journal of Crystal Growth
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
R. Ghez, J.S. Lew
Journal of Crystal Growth
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Robert W. Keyes
Physical Review B
K.A. Chao
Physical Review B