Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
R.W. Gammon, E. Courtens, et al.
Physical Review B
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter