R. Srinivasan, Emile Sutcliffe, et al.
Applied Physics Letters
Pulsed laser irradiation (193 nm, t=14 ns) at low fluence (0.045 J/cm 2) of GaAs 18O enriched native oxides leads to a very efficient oxygen exchange between 18O in the oxides and 16O coming from the surrounding atmosphere. 1000 laser pulses caused a complete exchange of oxygen from an oxide layer of ∼30-nm thickness. This showed a very high rate of oxygen self-diffusion under laser irradiation although the total oxygen content in the oxide was preserved. As this process is believed to have a threshold fluence, a model based on the hole-pair mechanism of Itoh and Nakayama [Phys. Lett. A 92, 471 (1982)] is suggested. Preferential loss of As and preferential oxidation of Ga are also observed to some extent.
R. Srinivasan, Emile Sutcliffe, et al.
Applied Physics Letters
R. Srinivasan, E. Sutcliffe
American Journal of Ophthalmology
R. Srinivasan, Bodil Braren, et al.
Journal of Applied Physics
R. Srinivasan, Kelly G. Casey, et al.
Journal of Applied Physics