S.S. Lu, K.R. Lee, et al.
Journal of Applied Physics
Current-voltage characteristics of nGaAs-iAlxGa 1-xAs-nGaAs heterojunction barriers grown on (100) substrates have been measured under uniaxial stress along 〈100〉 at 77 K. The results show that thermionic emission current through longitudinal X valleys becomes dominant over Fowler-Nordheim tunneling current through Γ or transverse X valleys, as stress increases. From the stress-dependent thermionic emission current the rate of change with stress of the band-edge energy difference between Γ in GaAs and longitudinal X in AlGaAs is deduced to be 14±2 meV/kbar, which leads to an X-valley shear deformation potential of 9.6±1.8 eV.
S.S. Lu, K.R. Lee, et al.
Journal of Applied Physics
S.S. Lu, K. Lee, et al.
Applied Physics Letters
G. Burns, M.I. Nathan
Proceedings of the IEEE
M. Eizenberg, M. Heiblum, et al.
Journal of Applied Physics