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PaperSome electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devicesC. Godet, Jerzy Kanicki, et al.Journal of Applied Physics
PaperElectrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin filmsW.L. Warren, P. Lenahan, et al.Journal of Applied Physics
PaperBias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistorsFrank R. Libsch, Jerzy KanickiApplied Physics Letters
