PaperArsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyAlan C. Warren, J. Woodall, et al.Applied Physics Letters
PaperGaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitatesM.R. Melloch, K. Mahalingam, et al.Journal of Crystal Growth
PaperHigh-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth GaAsD.D. Nolte, M.R. Melloch, et al.Applied Physics Letters
PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAsE.S. Harmon, M.L. Lovejoy, et al.Applied Physics Letters
