PaperArsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyAlan C. Warren, J. Woodall, et al.Applied Physics Letters
PaperRole of excess as in low-temperature-grown GaAsAlan C. Warren, J. Woodall, et al.Physical Review B
Conference paperRadiation-Induced Charge Trapping in Thin Al2O 3/SiOxNy/Si(100) Gate Dielectric StacksJ.A. Felix, M.R. Shaneyfelt, et al.IEEE TNS
PaperTwo-dimensional arsenic-precipitate structures in GaAsM.R. Melloch, C.L. Chang, et al.Journal of Crystal Growth
