THRESHOLD CHARACTERISTICS OF MUTUALLY COUPLED SQUIDS.
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983
The formation of WNx Schottky diodes on GaAs surfaces with various interface conditions was investigated by performing H2-and N2-plasma treatments on GaAs surfaces prior to the WNx film deposition. After annealing at 810°C for 10 min, an improvement in the diode rectifying characteristics was generally observed, resulting from the thermal recovery of the sputtering and plasma-induced damage. The maximum Фt-v = 0.76 eV was obtained for the H2-plasma-treated diodes. Samples with an N2-plasma-treated interface showed a reduced barrier height and a higher ideality factor with corresponding nonlinearity in the C-V curves due to the presence of a high density of inter-facial states. © 1989 IEEE
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983
A. Paccagnella, A.C. Callegari, et al.
Journal of Applied Physics
N. Braslau, P.S. Hauge
IEEE T-ED
M. Eizenberg, M. Heiblum, et al.
Journal of Applied Physics