X-ray lithography induced radiation effects in deep submicron CMOS devices

X-ray lithography introduces device radiation damage from the high energy photons during the lithography process. We have studied this effect on deep submicron n-and p-channel MOSFETs with gate dielectric thickness at 7 to 13 nm. After the x-ray irradiation the device characteristics are strongly affected by the generation of oxide change interface states and electron traps.