PaperGe-GaAs superlattices by molecular beam epitaxyChin-An Chang, Armin Segmüller, et al.Applied Physics Letters
PaperComment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))I.C. Noyan, Armin SegmüllerJournal of Applied Physics
PaperOriented growth of niobium and molybdenum on GaAs crystalsM. Eizenberg, Armin Segmüller, et al.Journal of Applied Physics
PaperX-ray diffraction measurement of the Jahn-Teller distortion in TmVO4Armin Segmüller, R.L. Melcher, et al.Solid State Communications
