Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)
- D.J. DiMaria
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
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4 results for R.F. DeKeersmaecker
Light-activated storage device (LASD)
- D.J. DiMaria
- R.F. DeKeersmaecker
- et al.
- 2008
- Journal of Applied Physics
Electron trapping and detrapping characteristics of arsenic-implanted SiO2 layers
- R.F. DeKeersmaecker
- D.J. Dimaria
- 2008
- Journal of Applied Physics
Hole trapping in the bulk of SiO2 layers at room temperature
- R.F. DeKeersmaecker
- D.J. Dimaria
- 2008
- Journal of Applied Physics